? 2008 ixys corporation, all rights reserved ds99888a (04/08) v dss = 1200v i d25 = 13a r ds(on) 630 m t rr 300 ns n-channel enhancement mode avalanche rated fast intrinsic diode symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1200 v v dgr t j = 25 c to 150 c, r gs = 1m 1200 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c13a i dm t c = 25 c, pulse width limited by t jm 50 a i a t c = 25 c10a e as t c = 25 c1j dv/dt i s i dm , v dd v dss ,t j 150 c 15 v/ns p d t c = 25 c 290 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold plastic body for 10s 260 c v isol 50/60 hz, rms, 1 minute 2500 v~ f c mounting force 20..120/4.5..27 n/lb. weight 5g g = gate d = drain s = source symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 1ma 1200 v v gs(th) v ds = v gs , i d = 1ma 3.5 6.5 v i gss v gs = 30v, v ds = 0v 200 na i dss v ds = v dss 25 a v gs = 0v t j = 125 c 5 ma r ds(on) v gs = 10v, i d = 10a, note 1 630 m features ? silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation ? low drain to tab capacitance(<30pf) ? low r ds (on) hdmos tm process ? rugged polysilicon gate cell structure ? unclamped inductive switching (uis) rated ? fast intrinsic rectifier advantages ? easy assembly ? space savings ? high power density isolated tab isoplus247 (ixfr) e153432 IXFR20N120P polar tm power mosfet hiperfet tm applications: z high voltage switched-mode and resonant-mode power supplies z high voltage pulse power applications z high voltage discharge circuits in lasers pulsers, spark igniters, rf generators z high voltage dc-dc converters z high voltage dc-ac inverters
ixys reserves the right to change limits, test conditions, and dimensions. IXFR20N120P symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 10a, note 1 10 16 s c iss 11.1 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 600 pf c rss 60 pf r gi gate input resistance 1.60 t d(on) resistive switching times 49 ns t r v gs = 10v, v ds = 0.5 ? v dss , i d = 10a 45 ns t d(off) r g = 1 (external) 72 ns t f 70 ns q g(on) 193 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 10a 74 nc q gd 85 nc r thjc 0.43 c /w r thcs 0.15 c /w source-drain diode characteristic values t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 20 a i sm repetitive, pulse width limited by t jm 80 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 300 ns q rm 0.84 c i rm 9 a ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1: pulse test, t 300 s; duty cycle, d 2%. i f = 10a, -di/dt = 100a/ s v r = 100v, v gs = 0v isoplus247 (ixfr) outline
? 2008 ixys corporation, all rights reserved IXFR20N120P fig. 6. maximum drain current vs. case temperature 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 1. output characteristics @ 25oc 0 2 4 6 8 10 12 14 16 18 20 024681012 v ds - volts i d - amperes v gs = 10v 9v 7 v 8 v fig. 2. extended output characteristics @ 25oc 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 9v 7 v 8 v fig. 3. output characteristics @ 125oc 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 101214161820222426 v ds - volts i d - amperes v gs = 10v 8v 7v 6v fig. 4. r ds(on) normalized to i d = 10a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 20a i d = 10a fig. 5. r ds(on) normalized to i d = 10a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 5 10 15 20 25 30 35 40 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc
ixys reserves the right to change limits, test conditions, and dimensions. IXFR20N120P ixys ref: f_20n120p(86) 04-03-08-b fig. 12. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 7. input admittance 0 5 10 15 20 25 30 35 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 10 20 30 40 50 60 0.30.40.50.60.70.80.91.01.11.21.3 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 2 4 6 8 10 12 14 16 0 40 80 120 160 200 240 280 q g - nanocoulombs v gs - volts v ds = 600v i d = 10a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss
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